E-mode GaN HEMT with Ferroelectric Gate Stack

E-mode GaN HEMT with Ferroelectric Gate Stack
(Product under development, coming soon.)

650V 20A GaN-on-Si Schottky Barrier Diode

650V 20A 280 mm, low turn-on GaN-on-Si Schottky Barrier Diode
(Product under development, coming soon.)

650V D-Mode 30A GaN-on-Si power transistor

650V D-Mode 30A GaN-on-Si power transistor
R_DS(on)= 135 mΩ
Fast and controllable fall and rise times